Respiratory syncytial virus (RSV) is the most common pathogen associated with acute lower respiratory tract infections in young children. RSV is also a major viral pathogen causing severe lung disease in the adult population, particularly among the elderly. We conducted a review of adult RSV studies published from January 1970 to February 2017 to determine the burden of disease among adults worldwide. There were no restrictions on health care setting or definition of RSV infection. A total of 1530 published studies were identified, 95 of which were included in this review. The incidence rates of hospitalised RSV acute respiratory tract infection (ARI) in adults >65 years old ranged from 7.3 to 13.0/105 population in Africa and Asia and from 190 to 254/105 population in the USA. Higher incidence rates (195–1790/105 population) were observed in adults ≥50 years old for outpatient or emergency visits in the USA. Of all ARI patients, RSV accounted for 1–10% in adults and 2–14% in patients with chronic diseases or transplantation. Given the limitations in the existing data, significant efforts should be made to generate evidence on the burden of RSV infections in adults and to estimate the potential impact of future preventive interventions.

Following a recent assessment of the distribution and habitat use of Gurney’s Pitta in Myanmar (Burma), further extensive surveys were undertaken in 2010, 2011 and 2012. These have extended the species’ known altitudinal limit to between 250 m and 300 m asl and its latitudinal limit to above 12.5°N, around 80 km north of the northernmost historical record, although the species was recorded far less frequently at higher altitudes and latitudes. Birds were recorded in a range of forested habitats, from intact primary forest to secondary and bamboo forest, with no significant difference between major forest types in the likelihood of occurrence. Niche envelope modelling (MaxEnt) suggested a total range size in Myanmar of 3,379 km2, and did not identify any potentially suitable areas in adjacent parts of Thailand. The species’ preference for warmer, wetter areas on flat ground, conditions ideal for growing oil palm and rubber, suggest that its distribution is likely to contract in the near future. The entire range of Gurney’s Pitta in Myanmar falls within the part of the country most suitable for commercial oil palm production, although the projected yields within its range are low to moderate. Field surveys found evidence of rapid recent deforestation and high levels of hunting and trapping in many parts of the region. The species’ range in Myanmar does not overlap with any protected areas. The protection of southern Myanmar’s biodiversity will require substantial investment by foreign conservation interests, sympathetic land-use planning and the strengthening of environment legislation. Protection of extensive tracts of lowland forest within the range of Gurney’s Pitta, particularly the proposed Lenya National Park and the adjacent Ngawun and Htaung Pru Reserve Forests, is urgently needed. Conserving these areas will also protect populations of other globally threatened bird and mammal species.

A preliminary survey for Gurney's Pitta Pitta gurneyi was undertaken at five sites within the species' historical range in the Tanintharyi (Tenasserim) Division of Myanmar from 14 to 24 May 2003. During the surveys, Gurney's Pittas were heard and/or observed at four sites with a maximum of 10–12 pairs recorded at one site. Birds were encountered in logged primary and secondary forest below 100 m on flat ground, sometimes less than 10 m from forest edge. All encounters were within 2 km of the main trans-Tanintharyi highway. Landsat satellite imagery was used to map remaining lowland forests and Gurney's Pitta habitat in the Tanintharyi Division. Our analysis demonstrated that only 4,705 km2 of lowland forest remain with about 3,496 km2 in flat areas with slopes < 10°. On the basis of previously reported population densities, these habitats may support a population of 5,152–8,586 pairs. Much of the remaining habitat is restricted to small and fragmented patches < 1 km2 in area. The five largest patches have a total area of 1,431 km2 and range in size from 137 to 467 km2. This survey demonstrated that Gurney's Pitta still occurs within its historical range in Myanmar, although probably not at any of the historical collecting localities visited. The global population of Gurney's Pitta is at least 100% greater than the latest published estimate. This survey has also shown that the Gurney's Pitta population in southern Tanintharyi Division is under pressure from forest conversion to oil palm. Contrary to the situation in neighbouring Thailand, sufficient forest remains to establish landscape level protected areas covering a broad ecological continuum. Securing populations of Gurney's Pitta within either expanded or entirely new protected areas must be the best chance for the species and the Sundaic flora and fauna of which it is part.

Raman scattering experiment was carried out to study material and electronic properties of the aligned GaN nanorods grown by plasma-assisted molecular beam epitaxy. Due to the small size of the nanorods and the relatively high power density of the laser illumination used in this investigation, local heating of the sample cannot be neglected. Special care has been taken to identify the frequency shift in the optical phonon peaks induced by local heating prior to any spectral analysis. The residual stress in the GaN nanorods was estimated by analyzing the frequency shift of its E2 Raman mode. It was found that the frequency of E2 mode is shifted by only 0.1 cm-1 comparing with the stress-free frequency, indicating a negligible residual stress in nanorods. Owing to aligned geometry of the nanorods and the back-scattering scattering geometry used in the experiment, A1(LO) Raman mode was collected. The free carrier concentration as well as electron mobility of the GaN nanorods were obtained by the line shape analysis of the coupled A1(LO) phonon-plasmon mode. The electron concentration and mobility of electron obtained from line shape analysis are 3.3×1017 cm-3 and 140 cm2/Vs, respectively. We presented a general method of better determining the electronic parameters of the GaN nanostructures via Raman scattering.

Zinc oxide (ZnO) is an interesting material for short-wavelength optoelectronics due to its wide band gap. The nanostructures of ZnO are also intriguing since a variety of morphology can be obtained by employing different processing parameters. In our laboratory, ZnO nanonails were successfully synthesized at low temperature using a thermal chemical vapor deposition. The morphology of the sample was studied by using scanning electron microscopy. The shape of the nail head can be controlled from hexagon to quasi-circular shape. X-ray diffraction, Raman scattering, photoluminescence spectroscopy were also performed to analyze the ZnO nanonail. Photoluminescence spectroscopy suggested that the defects in the ZnO nanonail and nanobone are of different nature.

The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm−2eV−1 to about 6 × 1011 cm−2eV−1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11–20) 4H-SiC.

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiCSiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

Based upon graphite mask, selective aluminum/boron doping of SiC by thermal diffusion has been successfully realized in a temperature range of 1800 to 2100°C. Secondary ion mass spectrometry (SIMS) was used to identify the doping profiles, which showed very high aluminum concentration (5×1019 cm−3) near the surface and linearly graded boron profile up to several micrometers in depth. Hall-effect measurement was also employed to obtain the carrier concentration, which showed more than 1019 cm−3 carrier concentration at room temperature. Cathodoluminescence (CL) image clearly illustrated the locally diffused pattern. In addition, planar p-n diodes based upon this technique were fabricated and current-voltage (I-V) characteristics were measured. Excellent rectification property has been obtained. Built-in voltage of 2.9 V in the formed p-n junction was obtained by capacitance-voltage (C-V) measurement.

This paper describes the development of a nitrogen-based passivation technique for interface states near the conduction band edge [Dit(Ec)] in 4H-SiC/SiO2. These states have been observed and characterized in several laboratories for n- and p-SiC since their existence was first proposed by Schorner, et al. [1]. The origin of these states remains a point of discussion, but there is now general agreement that these states are largely responsible for the lower channel mobilities that are reported for n-channel, inversion mode 4H-SiC MOSFETs. Over the past year, much attention has been focused on finding methods by which these states can be passivated. The nitrogen passivation process that is described herein is based on post-oxidation, high temperature anneals in nitric oxide. An NO anneal at atmospheric pressure, 1175°C and 200–400sccm for 2hr reduces the interface state density at Ec-E ≅0.1eV in n-4H-SiC by more than one order of magnitude - from > 3×1013 to approximately 2×1012cm−2eV−1. Measurements for passivated MOSFETs yield effective channel mobilities of approximately 30–35cm2/V-s and low field mobilities of around 100cm2/V-s. These mobilities are the highest yet reported for MOSFETs fabricated with thermal oxides on standard 4H-SiC and represent a significant improvement compared to the single digit mobilities commonly reported for 4H inversion mode devices. The reduction in the interface state density is associated with the passivation of carbon cluster states that have energies near the conduction band edge. However, attempts to optimize the the passivation process for both dry and wet thermal oxides do not appear to reduce Dit(Ec) below about 2×1012cm−2eV−1 (compared to approximately 1010cm−2eV−1 for passivated Si/SiO2). This may be an indication that two types of interface states exist in the upper half of the SiC band gap – one type that is amenable to passivation by nitrogen and one that is not. Following NO passivation, the average breakdown field for dry oxides on p-4H-SiC is higher than the average field for wet oxides (7.6MV/cm compared to 7.1MV/cm at room temperature). However, both breakdown fields are lower than the average value of 8.2MV/cm measured for wet oxide layers that were not passivated. The lower breakdown fields can be attributed to donor-like states that appear near the valence band edge during passivation.

Using a fast ramp response technique, the high field characteristics, specifically the breakdown strength, of thermally grown silicon-dioxide (SiO2) and MOCVD grown aluminum-nitride (AIN), on n-type 6H-SiC epilayers is obtained as a function of three different processing conditions for the insulator growth. Significant improvement in the breakdown strength of thermally grown SiO2 after a 30 minute post annealing at 400°C in nitrogen ambient is reported. Further, the influence of temperature profile during the AIN growth on the breakdown strength is reported.

Edge termination is an important aspect in the design of high power p-n junction devices. In this paper, we compare the breakdown characteristics of 4H-SiC p+-n diodes with oxide passivation and with edge termination using either low or high energy ion implantations. N- and p-type epilayers of 4H-SiC were grown by chemical vapor deposition on n+ 4H-SiC wafers. Circular mesa structures of different diameters were patterned and isolated by reactive ion etching. Four types of samples were fabricated. The first group was not implanted or passivated and was left for control. The second type consisted of oxide-passivated diode structures while the third and fourth types were ion implanted with 30 keV Ar+ and 2.2 MeV He+ ions, respectively. The time dependent breakdown characteristics were determined using a fast voltage ramp technique. The reverse bias breakdown voltages and leakage currents of these diodes were different for the different types of the edge termination. Diodes terminated using 2.2 MeV ion implantation yielded the best breakdown characteristics. A majority of the diodes exhibited abrupt breakdown.

Aluminum nitride (AlN) is a promising material as gate insulator for 6H-SiC metal-insulator-semiconductor (MlS)-based devices. Using metalorganic chemical vapor deposition (MOCVD)-grown AlN, we have recently fabricated Au/AlN/6H-SiC MIS structures with different AlN/6H-SiC interfacial characteristics depending on the AlN growth procedures. We have also found that the use of hydrogen chloride gas is effective in improving the capacitance-voltage characteristics of the AlN/6H-SiC structure. The reason for such improvement is not well understood and several possible mechanisms for such improvement include factors such as substrate surface morphology and surface contaminants. In this paper, we will examine the relationship between surface morphology of the substrates and the capacitance-voltage characteristics of Au/AlN/6H-SiC structures.

We have characterized the high electric field breakdown process of several epitaxial 4H-SiC p-n structures with oxide passivation. The breakdown voltage was found to be dependent on the size of the diode structures as well as their proximity to any structural defects. The time dependence of the breakdown process was also measured to determine the characteristics of the breakdown mechanism. This time dependence measurement provides an indication of the quality of the diode structures. Both soft and abrupt breakdown mechanisms were observed showing the influence of defects on the high field behavior of the diode structures. Measurements done with and without the use of Fluorinert fluid did not show any difference in the breakdown voltage indicating that surface flashover breakdown mechanism did not play a major role in the avalanche breakdown process.

The current vs voltage characteristics of 4H-SiC MOS capacitors under deep depletion are obtained by a fast ramp response technique so as to obtain the maximum field that can be applied to the MOS structure without the failure of either the semiconductor or the oxide layer. The experiments on n-type 4H SiC wafers having a 5 μm thick epilayer of 1015 – 1016 cm−3 doping concentration and an oxide layer 1200Å – 1500Å thick, indicate the significant influence of the oxide quality and defects in the semiconductor on the nature of the current response during accumulation and deep depletion measurements. The effect of the conductivity of the oxide layer is reflected clearly in the current response, even though classical C-V measurements do not indicate any abnormality. Apart from obtaining the maximum breakdown fields of the semiconductor and the oxide, the fast-ramp response technique provides useful information about the generation processes associated with defects in the MOS structure.

A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted C.H. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.

A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.