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Is it a Right Assumption That B and Ge are Distributed Randomly After Growing a Strained HBT-Structure?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 716 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, B4.7
- Print publication:
- 2002
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A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J3.4
- Print publication:
- 2001
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- Article
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