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A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms.

Published online by Cambridge University Press:  21 March 2011

Victor I. Kol'dyaev
Victor I. Kol'dyaev*
Affiliation:
PDF/Solutions, Inc (333 San Carlos, San Jose, 95110, CA, USA)
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Abstract

The main drawbacks of the known models of the B diffusion in strained SiGe layers are summarized. A mechanism is suggested to self-consistently explain the main experimental features and original experimental data which considers the trapping of B atoms by Ge atoms during B diffusion in the Si lattice resulting in the retarded B diffusivity. Fluctuations of Ge atom numbers in a nearest B atom environment result in percolation mechanism of B transport through dilatation centers of random size. A new solid state transport modelis generalized by considering dispersion transport of positive and negative point dilatation defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J3.4
Copyright
Copyright © Materials Research Society 2001

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References

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