8 results
A Comparison of N+ type and P+ type Polysilicon Gate in High Speed Non-Volatile Memories
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- Journal:
- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I03-12
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- 2007
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The Effects of the LDD process on Short-channel effects in Nanoscale Charge Trapping Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I03-13
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- 2007
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A Compact Single-Walled Carbon Nanotube Transistor Integrated with a Silicon MOSFET Using a Single Common Gate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 963 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0963-Q14-04
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- 2006
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Micrometer Scale Silicon Dioxide Tunnels for On-chip Fluidic Sample Delivery to Nanometer-scale Chemical Sensors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 872 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, J9.1
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- 2005
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Nonvolatile Silicon Memory at the Nanoscale
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- Journal:
- MRS Bulletin / Volume 29 / Issue 11 / November 2004
- Published online by Cambridge University Press:
- 31 January 2011, pp. 845-851
- Print publication:
- November 2004
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Three Dimensional Integration with Benzocyclobutene as the Wafer-Bonding Medium
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- Journal:
- MRS Online Proceedings Library Archive / Volume 833 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, G3.5
- Print publication:
- 2004
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A Silicon Nitride Based Shallow Trench Isolation with Side-Gate for CMOS Integration with MEMS Components for System-On-Chip Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 833 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, G6.9
- Print publication:
- 2004
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Investigations of Silicon Nano-crystal Floating Gate Memories
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- Journal:
- MRS Online Proceedings Library Archive / Volume 638 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, F2.4.1
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- 2000
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