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Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G01-05
- Print publication:
- 2010
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- Article
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Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1108 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1108-A05-04
- Print publication:
- 2008
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- Article
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