22 results
Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices
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- Journal:
- The European Physical Journal - Applied Physics / Volume 23 / Issue 3 / September 2003
- Published online by Cambridge University Press:
- 15 September 2003, pp. 149-205
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- September 2003
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Quantum dots of InAs/GaSb type II superlattice for infrared sensing
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- MRS Online Proceedings Library Archive / Volume 692 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, H3.1.1
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- 2001
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Study of Thin films Polarity of Group III Nitrides
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 727-732
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- 1999
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Study of Thin Films Polarity of Group III Nitrides
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.46
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- 1998
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GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e1
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- 1998
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Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 411
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- 1997
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High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range
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- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 13
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- 1996
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AlxGa1-xN-Based Materials and Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 79
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- 1996
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GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging
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- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 195
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- 1996
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High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 477
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- 1996
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InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates
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- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 79
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- 1996
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Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 417 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 147
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- 1995
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Growth of GaN without Yellow Luminescence
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
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- 21 February 2011, 625
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- 1995
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Spectral Response of GaN P-N Junction Photovoltaic Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 955
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- 1995
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The Microstructural Study of Aluminum Nitride Thin Films: Epitaxy on the Two Orientations of Sapphire and Texturing on Si
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 387
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- 1995
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Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 358 / 1994
- Published online by Cambridge University Press:
- 28 February 2011, 1023
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- 1994
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Growth of InSb/GaAs Layers on YIG-Coated GGG Substrate
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- MRS Online Proceedings Library Archive / Volume 281 / 1992
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- 25 February 2011, 381
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- 1992
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High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition
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- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 375
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- 1992
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Optical, Electrical, and Structural Characterization of GaInAsP/InP Layers Grown on Silicon Substrate for 1.35 μm Laser Applications
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- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 369
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- 1992
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Low Pressure Mocvd Growth and Characterization of GaAs and InP on Silicon Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 116 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 297
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- 1988
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