Hostname: page-component-7479d7b7d-qlrfm Total loading time: 0 Render date: 2024-07-12T01:32:20.042Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of GaN without Yellow Luminescence

Published online by Cambridge University Press:  21 February 2011

X. Zhang ,
P. Kung ,
D. Walker ,
A. Saxler  and
M. Razeghi
X. Zhang
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
P. Kung
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
D. Walker
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
A. Saxler
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
M. Razeghi
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Northwestern University, Evanston, IL 60208
Get access

Abstract

We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 625
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., Senoh, M., Isawa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).Google Scholar
2 Ulmer, M. P., Razeghi, M. and Bigan, E., SPIE Proceedings, Vol. 2397, San Jose, CA, 1995, p.210 Google Scholar
3 Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
4 Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
5 Lester, S. D., Ponce, F. A., Crawford, M. G. and Steigerwald, D. A., Appl. Phys. Lett. 66, 1249(1995).Google Scholar
6 Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980)Google Scholar
7 Pankove, J. I. and Hutchby, J. A., J. Appl. Phys. 47, 5387 (1976)Google Scholar
8 Singh, R., Molnar, R. J., Ünlü, M. S. and Moustakas, T. D., Appl. Phys. Lett. 64, 336 (1994)Google Scholar
9 Glaser, E. R., Kennedy, T. A., Doverspike, K., Rowland, L. B., Gaskill, D. K., Freitas, J. A., Jr., Khan, M. A., Olson, D. T. and Kuznia, J. N., Phy. Rev. B51, 13326 (1995).Google Scholar
10 Suski, T., Perlin, P., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J., Bockowski, M., Porowski, S. and Moustakas, T. D., Appl. Phys. Lett. 67, 2188 (1995)Google Scholar
11 Jenkins, D. W., Dow, J. D. and Tsai, M.-H., J. Appl. Phys. 72, 4130 (1992).Google Scholar
12 Boguslawski, P., Briggs, E., White, T. A., Wensell, M. G. and Bernholc, J., in Diamond. SiC and Nitride Wide-bandgap Semiconductors, edited by Carters, C. H., Jr., Gildenblat, G., Nakamura, S. and Nemanich, R. J., MRS Symposia Proceedings, No. 339 (Material Research Society, Pittsburgh, 1994), p. 693.Google Scholar
13 Neugebauer, J. and Van de Walle, C. G., Phys. Rev. B50, 8067 (1994)Google Scholar
14 Zhang, X., Kung, P., Saxler, A. and Razeghi, M., Invited talk in Physics of Semiconducting Compounds, Jaszowiez, Poland, May 29 – June 2, 1995.Google Scholar
15 Zhang, X., Kung, P., Saxler, A., Walker, D., Wang, T. C. and Razeghi, M., Appl. Phys. Lett. 67, 1745 (1995).Google Scholar
16 Zhang, X., Kung, P., Walker, D., Piotrowski, J., Rogalski, A., Saxler, A. and Razeghi, M., Appl. Phys. Lett. 67, 2028 (1995)Google Scholar
17 Wetzel, C., Wolm, D., Meyer, B. K., Pressel, K., Nilsson, S., Mokhov, E. N. and Baranov, P. G., Appl. Phys. Lett. 65, 1033 (1994).Google Scholar
18 Nakamura, S., Mukai, T., Senoh, M. and Iwasa, I., Jpn. J. Appl. Phys. 31, L139 (1992)Google Scholar