6 results
Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition
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- Journal:
- Journal of Materials Research / Volume 14 / Issue 4 / April 1999
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1171-1174
- Print publication:
- April 1999
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A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e3
- Print publication:
- 1999
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Tem Study of Interfaces And Defects in Mocvd-Grown Gan on Sic on Simox
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 471
- Print publication:
- 1997
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Effects of X-ray and γ-ray Irradiation on GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 585
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- 1996
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High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e39
- Print publication:
- 1996
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Infrared Luminescence from MOCVD Gan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 559
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- 1994
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