5 results
Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 862 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, A9.7
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- 2005
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Efficient silicon light emitting diodes made by dislocation engineering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F5.1
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- 2002
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TEM and PL Study of FeSi2 Precipitates Formed in Si by Iron Implantation Using a Metal Vapor Vacuum Arc Ion Source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 737 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, F8.20
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- 2002
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Evidence for Non-Equilibrium Vacancy Concentrations Controlling Interdiffusion in III-V Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 527 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 401
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- 1998
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Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 358 / 1994
- Published online by Cambridge University Press:
- 28 February 2011, 163
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- 1994
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