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Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

Published online by Cambridge University Press:  01 February 2011

C.F. Chow ,
Y. Gao ,
S.P. Wong ,
N. Ke ,
Q. Li ,
W.Y. Cheung ,
G. Shao ,
M.A. Lourenco  and
K.P. Homewood
C.F. Chow
Affiliation:
Dept. of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
Y. Gao
Affiliation:
Dept. of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
S.P. Wong
Affiliation:
Dept. of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
N. Ke
Affiliation:
Dept. of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
Q. Li
Affiliation:
Dept. of Physics, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
W.Y. Cheung
Affiliation:
Dept. of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Hong Kong, China
G. Shao
Affiliation:
School of Engineering, University of Surrey, Guildford, Surrey GU2 7XH, UK
M.A. Lourenco
Affiliation:
School of Electronics Engineering, Computer and Mathematics, University of Surrey, Guildford, Surrey GU2 7XH,UK
K.P. Homewood
Affiliation:
School of Electronics Engineering, Computer and Mathematics, University of Surrey, Guildford, Surrey GU2 7XH,UK
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Abstract

We have prepared FeSi2 precipitates of nanometer size in Si by ion implantation using a metal vapor vacuum arc (MEVVA) ion source and studied their photoluminescence properties. Broad photoluminescence (PL) spectra at around 1550 nm were observed for all samples attributed to emission from the FeSi2 precipitates. It was found that all the PL spectra can be decomposed into two peaks, a main peak at near 1530 nm and a satellite peak at 1607 nm. Samples with a furnace annealing (FA) step at a lower temperature of 850°C are found to have a main peak position at a longer wavelength close to 1540 nm. For samples with a FA step at higher temperatures, the main peak position shifts to shorter wavelengths of near 1525 nm. In addition, we have also prepared MOS structures with implanted FeSi2 precipitates incorporated in the structures and measured their EL properties. The EL properties from these FeSi2-Si MOS structures after various thermal treatments were measured as a function of temperature from 80 to 300 K. Our preliminary results show that clear EL signals are obtained even at room temperature under appropriate processing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A9.7
Copyright
Copyright © Materials Research Society 2005

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