7 results
MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 412-424
- Print publication:
- 2000
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Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 717-724
- Print publication:
- 2000
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Design and Performance of Nitride-based UV LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.6.1
- Print publication:
- 2000
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Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.41
- Print publication:
- 1999
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Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 811-816
- Print publication:
- 1999
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MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W6.2
- Print publication:
- 1999
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- Article
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Monitoring and Controlling of Strain During Mocvd of AlGaN for UV Optoelectronics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G7.7
- Print publication:
- 1998
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