8 results
Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge
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- Journal:
- MRS Online Proceedings Library Archive / Volume 420 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 99
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- 1996
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High Deposition Rate a-Si:H for the Flat Panel Display Industry
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- Journal:
- MRS Online Proceedings Library Archive / Volume 420 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 83
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- 1996
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Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge
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- Journal:
- MRS Online Proceedings Library Archive / Volume 424 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 19
- Print publication:
- 1996
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High Deposition Rate a-Si:H for the Flat Panel Display Industry
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- Journal:
- MRS Online Proceedings Library Archive / Volume 424 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 9
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- 1996
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High Deposition Rate Pecvd Processes For Next Generation Tft-Lcds
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- MRS Online Proceedings Library Archive / Volume 345 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 175
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- 1994
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Influence of the Deposition Rate of the a-Si:H Channel on the Field-Effect Mobility of TFTs Deposited in a VHF Glow Discharge
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- Journal:
- MRS Online Proceedings Library Archive / Volume 345 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 65
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- 1994
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Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants
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- MRS Online Proceedings Library Archive / Volume 128 / 1988
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- 25 February 2011, 557
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- 1988
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Evidence for a nucleation barrier in the amorphous phase formation by solid-state reaction of Ni and single-crystal Zr
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- Journal:
- Journal of Materials Research / Volume 1 / Issue 6 / December 1986
- Published online by Cambridge University Press:
- 29 June 2016, pp. 774-780
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- December 1986
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