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Influence of the Deposition Rate of the a-Si:H Channel on the Field-Effect Mobility of TFTs Deposited in a VHF Glow Discharge

Published online by Cambridge University Press:  15 February 2011

H. Meiling ,
J. F. M. Westendorp ,
J. Hautala ,
Z. M. Saleh  and
C. T. Malone
H. Meiling
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
J. F. M. Westendorp
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
J. Hautala
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
Z. M. Saleh
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
C. T. Malone
Affiliation:
TEL America, Inc., 123 Brimbal Avenue, Beverly, MA 01915, USA.
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Abstract

Inverted-staggered hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) were deposited in a glow discharge with an excitation frequency of 60 MHz. At 13.56 MHz it has been reported that the field-effect mobility of this type of TFT decreases with increasing deposition rate of the a-Si:H layer, due to an increase in the defect density in the channel. A successful way of increasing the deposition rate without deteriorating the material properties has turned out to be utilizing a higher excitation frequency than the conventional 13.56 MHz.

The deposition rate of the 60-MHz-deposited transistor channel was changed from 350 to 1300 Å/min by diluting the process gas silane with hydrogen and by changing the rf power. The dependence of the a-Si:H material properties on deposition parameters is described. The deposition rate dependence of the mobility in the 60-MHz deposited thin films and devices is presented and discussed in terms of hydrogen dilution in the plasma and the hydrogen content of the a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 65
Copyright
Copyright © Materials Research Society 1994

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