4 results
Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K3.3
- Print publication:
- 2002
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Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F1.2
- Print publication:
- 2002
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Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.36.1
- Print publication:
- 2001
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Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T4.10.1
- Print publication:
- 2000
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