11 results
RTA Processing of W-Polycide Dual-Gate Sub-Micron Structures for Low-Voltage CMOS Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 429 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 115
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- 1996
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Comparative Study of Experimental Techniques for Boron Profiling at Poly-Si/SiO2 Interface
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 857
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- 1995
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Measuring Vacancy Diffusivity and Vacancy Assisted Clustering by Nitridation Enhanced Diffusion of Sb IN Si(100) Doping Superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 355 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 157
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- 1994
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Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 354 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 307
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- 1994
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In-Situ Processing of Si Film Structures in a Rapid Thermal Chemical Vapor Deposition Reactor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 3
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- 1993
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Si MBE on H-Passivated Si(100)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 259 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 439
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- 1992
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Metallization Systems for Bonding of InP Laser Diodes to CVD-Diamond Submounts
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- Journal:
- MRS Online Proceedings Library Archive / Volume 260 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 889
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- 1992
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Boron Diffusion in Si1−x Gex Strained Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 427
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- 1992
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Surface Protection during Plasma Hydrogenation for Acceptor Passivation in InP
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 501
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- 1989
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Characteristics of Doping and Diffusion of Heavily Doped N and P type InP and InGaAs Epitaxial Layers grown by Metal Organic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 867
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- 1989
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High Quality Si and Sil-xGex, Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 146 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 55
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- 1989
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