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Characteristics of Doping and Diffusion of Heavily Doped N and P type InP and InGaAs Epitaxial Layers grown by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

C.J. Pinzone ,
N. T. Ha ,
N. D. Gerrard ,
R. D. Dupuis  and
H. S. Luftman
C.J. Pinzone
Affiliation:
Microelectronics Research Center, The University of Texas; Austin, Texas 78712-1084
N. T. Ha
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, NJ. 07974
N. D. Gerrard
Affiliation:
STC Defense Systems; Paignton, Devon TQ4 7BE; United Kingdom
R. D. Dupuis
Affiliation:
Microelectronics Research Center, The University of Texas; Austin, Texas 78712-1084
H. S. Luftman
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, NJ. 07974
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Abstract

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material.

In this study, N-type doping above 1019 cm-3 has been achieved in InP and InGaAs using Sn as a dopant P-type Zn doping at these levels has also been achieved in these materials but p type activation above ~3 × 1018 cm-3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 867
Copyright
Copyright © Materials Research Society 1990

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References

1 Hayes, J. R., Bhat, R., Schumacher, H. and Koza, M., Electron. Lett. 2 (1987) p. 931 Google Scholar
2 Temkin, H., Frahm, R. E., Olsonn, N. A., Burrus, C. A., and McCoy, R. J., Electron. Lett., 22 (1986) p. 1267 Google Scholar
3 Deppe, D. G., Gerrard, N. D., Pinzone, C.J., Dupuis, R. D., Schubert, E. F., to be published in Appl. Phys. Lett. Google Scholar
4, 5, 6 Pinzone, C. J., Gerrard, N. D., Dupuis, R. D.,Ha, N. T., and Luftman, H. S. presented at the 31st Electronics Materials Conference, Cambridge, Mass., June21–23 1989, Paper R7; Electron. Lett. 25 19 (1989) p. 1315; accepted for publication J. Appl. Phys. Manuscript No.R-5407Google Scholar
7 Dupuis, R. D., Moudy, L. A., Dapkus, P. D. in Gallium Arsenide and Related Compounds 1978, edited by Wolfe, C. M. (Institute of Physics,Bristol, 1979) p. 1 Google Scholar
8 van der Pauw, L. J., Philips Research Reports, 13 1 (1958)Google Scholar
9, 10 Nelson, A. W. and Westbrook, L. D., J. Appl. Phys. 55 8 (1984) p. 3103; J. Crys. Growth 68 (1984) p. 102Google Scholar
11 Chiu, T. H., Cunningham, J. E., Tell, B.,and Schubert, E. F., J.of Appl. Phys., 64 3 (1988) p. 1578Google Scholar
12 Sharma, B. L. Diffusion in Semiconductors. Trans Tech Publication, Germany, 1970 p. 13 Google Scholar
13 van Gurp, G. J., van Dongen, T., Fontjin, G. M., Jacobs, J. M., and Tjaden, D. L. A., J. Appl. Phys. 65 2 (1989) p. 553 Google Scholar
14 Kittel, C., Introduction to Solid State Physics 5th edition; J. Wiley and Sons, N.Y., 1976, p. 100 Google Scholar