5 results
Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 996 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0996-H03-04
- Print publication:
- 2007
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Issues in High-ĸ Gate Stack Interfaces
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- Journal:
- MRS Bulletin / Volume 27 / Issue 3 / March 2002
- Published online by Cambridge University Press:
- 31 January 2011, pp. 212-216
- Print publication:
- March 2002
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Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 317
- Print publication:
- 1999
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Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 177
- Print publication:
- 1999
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Characterization of Silicon-Nitride Film Growth by Remote Plasmaenhanced Chemical-Vapor Deposition (Rpecvd)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 341
- Print publication:
- 1993
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