Ion-Projection Lithography (IPL) is a future production technique for
submicron electronic devices, wich combines the advantages of e-beam and
X-ray lithography without having their disadvantages. Like electrons, ions
can be accelerated, focused and deflected, and as is the case with X-rays,
scattering in resist layers is less pronounced as for e-beams. Experimental
results of IPL obtained with an Ion-Projection-Lithography-Machine IPLM-01
are presented: Ion images of self supporting masks ten times demagnified
with a geometrical resolution < 0.25 μm printed into organic and
inorganic resist layers in high volume production oriented times.