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Resistless Patterning of Magnetic Storage Media Using Ion Projection Structuring

Published online by Cambridge University Press:  15 March 2011

A. Dietzel*
Affiliation:
IBM Deutschland Speichersysteme GmbH, Postfach 2540, D-55015 Mainz, Germany
R. Berger
Affiliation:
IBM Deutschland Speichersysteme GmbH, Postfach 2540, D-55015 Mainz, Germany
H. Grimm
Affiliation:
IBM Deutschland Speichersysteme GmbH, Postfach 2540, D-55015 Mainz, Germany
C. Schug
Affiliation:
IBM Deutschland Speichersysteme GmbH, Postfach 2540, D-55015 Mainz, Germany
W. H. Bruenger
Affiliation:
Fraunhofer Institute for Silicon Technology, ISiT, Fraunhoferstr. 1, D-25524 Itzehoe, Germany
C. Dzionk
Affiliation:
Fraunhofer Institute for Silicon Technology, ISiT, Fraunhoferstr. 1, D-25524 Itzehoe, Germany
F. Letzkus
Affiliation:
IMS Chips, Allmandring 30 a, D-70669 Stuttgart, Germany
R. Springer
Affiliation:
IMS Chips, Allmandring 30 a, D-70669 Stuttgart, Germany
S. Anders
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
Z.Z. Bandic
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
C.T. Rettner
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
B.D. Terris
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
H. Eichhorn
Affiliation:
Leica Microsystems Lithography GmbH, Goeschwitzer Str. 25 D-07745 Jena, Germany
M. Boehm
Affiliation:
Leica Microsystems Lithography GmbH, Goeschwitzer Str. 25 D-07745 Jena, Germany
D. Adam
Affiliation:
Leica Microsystems Lithography GmbH, Goeschwitzer Str. 25 D-07745 Jena, Germany
H. Loeschner
Affiliation:
IMS Nanofabrication GmbH, Schreygasse 3, A-1020 Vienna, Austria
E. Platzgummer
Affiliation:
IMS Nanofabrication GmbH, Schreygasse 3, A-1020 Vienna, Austria
G. Stengl
Affiliation:
IMS Nanofabrication GmbH, Schreygasse 3, A-1020 Vienna, Austria
*
1Corresponding author, Tel: +496131842426, Fax: +496131844152, E-mail: dietzel@de.ibm.com
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Abstract

Co/Pt thin film multilayers with strong perpendicular anisotropy and out-of-plane coercivities of 5-11 kOe were magnetically altered in areas of local ion beam interaction. The ion irradiations were performed by ion projection through silicon stencil masks fabricated by silicon on insulator (SOI) membrane technology. The ion projector at the Fraunhofer Institute for Silicon Technology (ISiT) was operated at 73 keV ion energy and with a 8.7- fold demagnification. After exposure to 3 × 1014Ar+/ cm2 magnetic islands smaller than 100 nm in diameter were resolved in the Co/Pt multilayersby means of magnetic force microscopy. The impact of different ion species (He+, Ar+ and Xe+) and ion energies (10 – 200 keV) on the multilayer structure was evaluated using Monte Carlo simulations. The ballistic interface intermixing was used to predict magnetic coercivity changes for various irradiation conditions. The simulations revealed that with 73 keV Ar+ and Xe+ ions the irradiation dose could be reduced by a factor of 100 and 400 respectively in comparison to 73 keV He+which was verified in the experiments. X-ray reflectivity measurements confirmed that the Co/Pt superlattice structure is slightly weakened during the irradiation and that the surface smoothness of the media is preserved. Using the Ion Projection Process Development Tool (PDT) at IMS-Vienna concentric data tracks including head positioning servo informations were patterned onto a 1” IBM microdrive™ glass disk which was coated with Co/Pt multilayers. In a single exposure step several tracks within an exposure field of 17 mm in diameter were structured by 2 × 1015He+/ cm2 at 45 keV using a 4- fold demagnification set-up.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1 Chappert, C., Bernas, H., Ferre, J., Kottler, V., Jamet, J.-P., Chen, Y., Cambril, E., Devolder, T., Rousseaux, F., Mathet, V., and Launois, H., Science 280, 1919 (1998).Google Scholar
2 Devolder, T., Chappert, C., Chen, Y., Cambril, E., Bernas, H., Jamet, J.P., and Ferre, J., Appl. Phys. Lett. 75, 403 (1999).Google Scholar
3 Terris, B.D., Folks, L., Weller, D., Baglin, J.E.E., Kellock, A.J., Rothuizen, H., and Vettiger, P., Appl. Phys. Lett. 75, 403 (1999).Google Scholar
4 Irmscher, M., Elian, K., Buschke, J., Letzkus, F., Reuter, C., and Springer, R., J. Vac. Sci. Technol. B 17, 3122 (1999).Google Scholar
5 Letzkus, F., Butschke, J., Höfflinger, B., Irmscher, M., Reuter, C., Springer, R., and Ehrmann, A., J. Mathuni Microelectronic Engineering 53, 609 (2000).Google Scholar
6 Hudek, P., Hrkut, P., Drzik, M., Kostic, I., Belov, M., Torres, J., Wasson, J., Wolfe, J.C., Degen, A., Rangelow, I.W., Voigt, J., Butschke, J., Letzkus, F., Springer, R., Ehrmann, A., Kaesmaier, R., Kragler, K., Mathuni, J., Haugeneder, E., and Löschner, H., J. Vac. Sci. Technol. B 17, 3127 (1999).Google Scholar
7 Loeschner, H., Stengl, G., Kaesmaier, R., and Wolter, A., EIPBN'2001, submitted to J. Vac. Sci. Technol. B.Google Scholar
8 Wormington, M., Panaccione, C., Matney, K.M., and Bowen, D.K., Phil. Trans. R. Soc. Lond. A, 357, 2827 (1999).Google Scholar
9 Weller, D., Baglin, J.E.E., Kellog, A.J., Hannibal, K.A., and Toney, M.F., J. Appl. Phys. 87, 5768 (2000).Google Scholar
10 Rettner, C.T., Anders, S., Baglin, J.E.E., Thompson, T., and Terris, B.D., submitted to Appl. Phys. Lett.Google Scholar
11TRIM Computer Simulation Software, Biersack GbR, Bergstr. 18, 10115 Berlin, Germany, e-mail: biersack@alaya.orgGoogle Scholar
12 Kiessig, H., Ann. Physik, 5, 769 (1931).Google Scholar
13 SenGupta, S.P., “Powder Diffraction”, (Allied Publishers Limited, Bombay, 1998).Google Scholar
14 Bruenger, W.H., Dzionk, C., Berger, R., Grimm, H., Dietzel, A., Letzkus, F., and Springer, R., Proc. MNE 2001 Int'l Conf. on Micro and Nano Engineering, Grenoble, France(2001).Google Scholar