6 results
AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 349-354
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- 2000
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AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W4.4
- Print publication:
- 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 221-226
- Print publication:
- 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.22
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- 1998
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New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 307
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- 1995
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Low-Temperature Growth of High Quality InxGa1−xN by Atomic Layer Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 213
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- 1995
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