27 results
Temperature- and Time-Dependence of Boron-Enhanced Diffusion From Evaporated- and Ultra-Low Energy Ion-Implanted Layers
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- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 3
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- 1999
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Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 341
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- 1997
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Impact of Metal Contamination of 7.0nm Gate Oxides on Various Substrate Materials
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- MRS Online Proceedings Library Archive / Volume 473 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 141
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- 1997
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The effect of the extra ion on residual damage in MeV implanted Si
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 187
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- 1997
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Characterization of interstitial defect clusters in ion-implanted Si
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
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- 15 February 2011, 193
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- 1997
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Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation
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- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 303
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- 1997
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Impact of Metal Contamination of 7.0nm Gate Oxides on Various Substrate Materials
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- MRS Online Proceedings Library Archive / Volume 477 / 1997
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- 10 February 2011, 81
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- 1997
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Heteroepitaxy of CoSi2 on Patterned Si(100) Substrates
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- MRS Online Proceedings Library Archive / Volume 402 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 481
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- 1995
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Phase Transformation of Titanium Disilicide Induced by High-Temperature Sputtering
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- MRS Online Proceedings Library Archive / Volume 402 / 1995
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- 15 February 2011, 83
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- 1995
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Energetic Ion Beams in Semiconductor Processing: Summary of a Doe Panel Study
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- MRS Online Proceedings Library Archive / Volume 396 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 859
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- 1995
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Properties of Point-Defects in Si for Process Modeling
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- MRS Online Proceedings Library Archive / Volume 389 / 1995
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- 15 February 2011, 3
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- 1995
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Defect Trapping and Precipitation Processes During Annealing of Cu and Au Implanted Si
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- MRS Online Proceedings Library Archive / Volume 354 / 1994
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- 21 February 2011, 255
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- 1994
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Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure
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- MRS Online Proceedings Library Archive / Volume 312 / 1993
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- 15 February 2011, 29
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- 1993
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Correlation of Electrical, Structural, and Optical Properties of Erbium in Silicon
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- MRS Online Proceedings Library Archive / Volume 298 / 1993
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- 25 February 2011, 447
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- 1993
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Microstructure and Electromigration Properties of Submicron Al (.5%Cu) Lines
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- MRS Online Proceedings Library Archive / Volume 317 / 1993
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- 15 February 2011, 219
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- 1993
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Ion Implanted Calibration Standards for Si Surface Contamination Detection by Txrf
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- MRS Online Proceedings Library Archive / Volume 315 / 1993
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- 21 February 2011, 347
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- 1993
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Correlation of Electrical, Structural, and Optical Properties of Erbium In Silicon
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- MRS Online Proceedings Library Archive / Volume 301 / 1993
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- 21 February 2011, 119
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- 1993
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CoSi2/Si(111) Interface Structure and its Influence on the Schottky Barrier
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- MRS Online Proceedings Library Archive / Volume 320 / 1993
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- 03 September 2012, 249
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- 1993
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Growth of Single Crystal Si/NiSi2/Si(100) and Si/CoSi2/Si(100) Structures by Molecular Beam Epitaxy and Furnace Annealing
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- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 641
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- 1992
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Mesotaxy Layers of IrSi3 in (111)Si Formed by MeV ION Implantation
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- MRS Online Proceedings Library Archive / Volume 235 / 1991
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- 28 February 2011, 279
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- 1991
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