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Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon

Published online by Cambridge University Press:  15 February 2011

L. Pelaz ,
G. H. Gilmer ,
M. Jaraiz ,
H.-J. Gossmann ,
C. S. Rafferty ,
D. J. Eaglesham  and
J. M. Poate
L. Pelaz
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
G. H. Gilmer
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
M. Jaraiz
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
H.-J. Gossmann
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
C. S. Rafferty
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
D. J. Eaglesham
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
J. M. Poate
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

An atomistic model for B implantation, diffusion and clustering is presented. The model embodies the usual mechanism of Si self-interstitial diffusion and B kick-out and also includes the formation of immobile precursors of B clusters prior to the onset of transient enhanced diffusion. These immobile complexes, such as BI2 (a B atom with two Si self-interstitials) form during implantation or in the very early stages of annealing, when the Si interstitial concentration is very high. They then act as nucleation centers for the formation of B-rich clusters during annealing. This model explains and predicts the behavior of B under a wide variety of implantation and annealing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 341
Copyright
Copyright © Materials Research Society 1997

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References

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