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Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D04-04
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- 2008
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Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B09-02
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- 2006
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Epitaxial Growth of SiC in a Vertical Multi-Wafer CVD System: Already Suited as Production Process?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 149
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- 1999
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