Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-07-02T19:23:31.044Z Has data issue: false hasContentIssue false
  • English
  • Français

Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices

Published online by Cambridge University Press:  01 February 2011

Christian Hecht ,
Bernd Thomas ,
Rene Stein  and
Peter Friedrichs
Christian Hecht
Affiliation:
christian.hecht@siemens.com, SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, Erlangen, 91058, Germany, +49 9131 734336, +49 9131 723046
Bernd Thomas
Affiliation:
bernd.thomas@siemens.com, SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058 Erlangen, Germany
Rene Stein
Affiliation:
rene.stein@siemens.com, SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058 Erlangen, Germany
Peter Friedrichs
Affiliation:
peter.friedrichs@siemens.com, SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058 Erlangen, Germany
Get access

Abstract

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6×100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm runs will be shown and compared to results of the former 7×3″ setup. The characteristic of the run-to-run reproducibility for the 6×100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3″, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

Keywords

epitaxychemical vapor deposition (CVD) (deposition)chemical vapor deposition (CVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D04-04
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Burk, A.A., Loughlin, M.J.O., Paisley, M.J., Powell, A.R., Brady, M.F., Leonhard, R.T., and McClure, D.A., Mat. Sci. Forum 527-529, 159 (2006).Google Scholar
2. Thomas, B., Hecht, C., Stein, R., and Friedrichs, P., Mater. Sci. Forum 527-529, 135 (2006).Google Scholar
3. Hecht, C., Thomas, B., and Bartsch, W., Mater. Sci. Forum 527-529, 239 (2006).Google Scholar
4. Thomas, B., Hecht, C., Stein, R., and Friedrichs, P., Mater. Res. Soc. Symp. Proc. 911, 37 (2006).Google Scholar
5. Thomas, B. and Hecht, C., Mater. Sci. Forum 483-485, 141 (2005).Google Scholar
6. Zhang, J., Forsberg, U., Isacson, M., Ellison, A., Henry, A., Kordina, O., and Janzen, E., Cryst, J.. Growth 241, 431 (2002).Google Scholar
7. Hecht, C., Thomas, B., Stein, R., and Friedrichs, P., presented at ICSCRM 2007, Otsu, Japan (2007) (in press).Google Scholar
8. Bergman, J.P., Lendenmann, H., Nilsson, P.A., Lindefelt, U., and Skytt, P., Mat. Sci. Forum 353-356, 299 (2001).Google Scholar
9. Sumakeris, J.J., Das, M.K., Ha, S., Hurt, E., Irvine, K., Paisley, M.J., O'Loughlin, M.J., Palmour, J.W., Skowronski, M., Hobgood, H. McD., and Carter, C. H. Jr., Mat. Sci. Forum 483-485, 155 (2005).Google Scholar
10. Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., , M.J.O'Loughlin, Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., and Carter, C. H. Jr., Mater. Sci. Forum 527-529, 141 (2006).Google Scholar
11. Kallinger, B., Thomas, B., and Friedrich, J., presented at ICSCRM 2007, Otsu, Japan (2007) (in press).Google Scholar
12. Bartsch, W., Thomas, B., Mitlehner, H., Bloecher, B., and Gediga, S., presented at EPE 2007, Aalborg, Danmark, (2007) (in press).Google Scholar