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Theoretical study on enhancement of the lateral photovoltaic effect for position sensitive detector with resonant cavity

Published online by Cambridge University Press:  26 November 2012

Feng Xi ,
Lan Qin ,
Ying Duan  and
Lian Xue
Feng Xi*
Affiliation:
Key Laboratory of Optoelectronic Technology and System, Ministry of Education, Chongqing University, Chongqing 400044, P.R. China School of Computer Science and Information Engineering, Chongqing Technology and Business University, Chongqing 400067, P.R. China
Lan Qin
Affiliation:
Key Laboratory of Optoelectronic Technology and System, Ministry of Education, Chongqing University, Chongqing 400044, P.R. China
Ying Duan
Affiliation:
Key Laboratory of Optoelectronic Technology and System, Ministry of Education, Chongqing University, Chongqing 400044, P.R. China
Lian Xue
Affiliation:
Key Laboratory of Optoelectronic Technology and System, Ministry of Education, Chongqing University, Chongqing 400044, P.R. China
*
ae-mail: xifeng7429@ctbu.edu.cn
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Abstract

A one-dimensional (1D) position sensitive detector (PSD) with the active layer imbedded in resonant cavity is proposed. The lateral photovoltaic effect (LPE) on the surface of active layer is related to the lifetime of photo-generated carriers-electrons and holes pairs. Theoretically, by improving the transmittance of multiple layered systems, the lifetime of carriers can be lengthened. For a photodetector in near infrared, we design the multiple layered system stacked by alternating layers with MgF2 and InP. The calculated result of electric field distribution in the proposed PSD is maximized in active layer with appropriate thickness. By this means, our aim is theoretically accomplished to enhance LPE in PSD based on resonant cavity structure.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 3 , December 2012 , 30103
Copyright
© EDP Sciences, 2012

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