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Unexpected Mode of Plastic Deformation in Cu Damascene Lines Undergoing Electromigration

Published online by Cambridge University Press:  17 March 2011

Arief S. Budiman ,
N. Tamura ,
B. C. Valek ,
K. Gadre ,
J. Maiz ,
R. Spolenak ,
W. A. Caldwell ,
W. D. Nix  and
J. R. Patel
Arief S. Budiman
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, California 94305
N. Tamura
Affiliation:
Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), 1 Cyclotron Rd., Berkeley, California 94720
B. C. Valek
Affiliation:
Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), 1 Cyclotron Rd., Berkeley, California 94720
K. Gadre
Affiliation:
Intel Corporation, Hillsboro, Oregon 97124
J. Maiz
Affiliation:
Intel Corporation, Hillsboro, Oregon 97124
R. Spolenak
Affiliation:
Max-Planck-Institut fur Metallforschung, Heisenbergstrasse 3, D-70569 Stuttgart, Germany
W. A. Caldwell
Affiliation:
Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), 1 Cyclotron Rd., Berkeley, California 94720
W. D. Nix
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, California 94305
J. R. Patel
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, California 94305 Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), 1 Cyclotron Rd., Berkeley, California 94720
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Abstract

An unexpected mode of plastic deformation was observed in damascene Cu interconnect test structure during an in-situ electromigration experiment and before the onset of visible microstructural damages (void, hillock formation). We show here, using a synchrotron technique of white beam X-ray microdiffraction, that the extent of this electromigration-induced plasticity is dependent on the line width. The grain texture of the line might also play an important role. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. This early stage behavior can have a direct bearing on the final failure stage of electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F7.3
Copyright
Copyright © Materials Research Society 2004

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