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Silver Patterning by Reactive Ion Beam Etching for Microelectronics Application

Published online by Cambridge University Press:  17 March 2011

L. Gao ,
J. Gstoettner ,
R. Emling ,
P. Wang ,
W. Hansch  and
D. Schmitt-Landsiedel
L. Gao
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
J. Gstoettner
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
R. Emling
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
P. Wang
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
W. Hansch
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
D. Schmitt-Landsiedel
Affiliation:
Institute for Technical Electronics, Technical University Munich D-80333, Munich, Germany
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Abstract

Dry etching of silver for the metallization in microelectronics is investigated. Etching is performed using an electron-cyclotron-resonance reactive-ion-beam-etching system (ECR-RIBE) in an Ar/CF4 or Ar/CF4/O2 mixture. The etch characteristics are strongly affected by ion energy (beam voltage and microwave energy); the O2 concentration in the reactive mixture has only a small effect. An anisotropic, smooth etch profile and clean surface are obtained. Focused ion beam (FIB) and atomic force microscopy (AFM) have been used to study the etched profile and the roughness, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.19
Copyright
Copyright © Materials Research Society 2004

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