Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T12:09:38.354Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation and Growth Dependence of ALD WNC on Substrate Surface Condition

Published online by Cambridge University Press:  17 March 2011

Get access

Abstract

ALD WNC nucleation and growth was observed strongly affected by different substrate materials and surface chemistries. Nucleation was inhibited on most pristine low k surfaces, which is attributed to low concentrations of chemisorption sites (Si-OH). Plasma treatments were used to alter the surface chemistry to improve nucleation. Surface closure and surface roughness of the WNC layer were found to strongly correlate with starting surface condition. Resistivities of the resulting films were also found dependent on starting surface treatment. But the relationship between W content of the films, surface treatment and resistivity was not fully comprehended.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F2.7
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.International Technology Roadmap for Semiconductors, p75, 2002 UpdateGoogle Scholar
2.Leskela, M., Ritala, M., Thin Solid Films 409, 138 (2002)CrossRefGoogle Scholar
3.Puurunen, R.L., Vandervorst, W., submitted for publicationGoogle Scholar
4.Beyer, G., Satta, A., Schuhmacher, J., Maex, K., Besling, W., Kilpela, O., Sprey, H., Tempel, G., Microelectronic Engr. (64) p233–245, 2002CrossRefGoogle Scholar
5.Abell, T., Maex, K., Microelectronic Engr., in press.Google Scholar
6.Li, W.M., Elers, K., Kostamo, J., Kaipo, S., Huotari, H., Soininen, M., Soininen, P.J., Tuominen, M., Hauka, S., Smith, S., Besling, W., Proceedings of IITC 2002, (IEEE NY), 2002.Google Scholar