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A Novel Organosiloxane Vapor Annealing Process for Improving Elastic Modulus of Porous Low-k Films

Published online by Cambridge University Press:  17 March 2011

Kazuo Kohmura ,
Shunsuke Oike ,
Masami Murakami ,
Hirofumi Tanaka ,
Syozo Takada ,
Yutaka Seino  and
Takamaro Kikkawa
Kazuo Kohmura
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Shunsuke Oike
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Masami Murakami
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Hirofumi Tanaka
Affiliation:
MIRAI-ASET, Tsukuba, Japan
Syozo Takada
Affiliation:
ASRC-AIST, Tsukuba, Japan
Yutaka Seino
Affiliation:
MIRAI-ASRC-AIST, Tsukuba, Japan
Takamaro Kikkawa
Affiliation:
MIRAI-ASRC-AIST, Tsukuba, Japan RCNS, Hiroshima Univ., Higashi-Hiroshima, Japan
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Abstract

A novel organosiloxane-vapor-annealing method has been developed for improving the mechanical strength of porous silica films with a low dielectric constant. Treatment of a porous silica film with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) under atmospheric nitrogen above 350 °C significantly enhanced the mechanical strength (i.e., elastic modulus and hardness) of the film. Results of Fourier transform infrared spectroscopy (FT-IR) and thermal desorption spectroscopy (TDS) suggested the formation of cross-linked poly(TMCTS) network on the porous silica internal wall surfaces by the TMCTS treatment. Such TMCTS cross-linked network is thought to enhance the mechanical strength of the low-k film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.2
Copyright
Copyright © Materials Research Society 2004

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