Thin-film materials are playing an ever-increasing role in basic and applied research and are the basis for a large number of devices. In many cases, thin films are used in multilayered configurations so that the interfaces between different materials play a key role in their properties. The thicknesses of thin films being investigated approach interatomic spacing, so interfacial structure and chemistry become dominant. The field is now at a stage where it is no longer sufficient to only obtain qualitative information; it is also necessary to understand the structure and chemistry quantitatively and to determine limits on the accuracy of the various characterization tools. The present and next issues of the MRS Bulletin bring together a number of experts in the most commonly used characterization tools. To highlight and encourage international collaboration, the articles presented here are jointly written by scientific groups in the United States and Europe.

The first issue of this series is dedicated to the most commonly used techniques: electron microscopy, x-ray diffraction, and surface analysis. The article on electron diffraction by Ourmazd, Scheffler, Heinemann, and Rouviere presents studies of atomic resolution microscopy and their limitations. Aspects highlighted are the importance of comparing simulations to the images obtained in the electron microscope, and the importance of theoretical studies to obtain quantitative information. The article by Fullerton, Bruynseraede, and Schuller describes recent developments in the field of x-ray diffraction. This article focuses on a refinement technique capable of quantitative determination of interfacial roughness, interdiffusion, and crystal structure changes in a variety of novel multilayer configurations.