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Strain-Engineering of Aluminum Scandium Nitride Films Grown Directly on Silicon by Utilizing a Gradient Seed Layer: Application of 4D-STEM Technique

Published online by Cambridge University Press:  22 July 2022

Pariasadat Musavigharavi ,
Rossiny Beaucejour ,
Roy H. Olsson III  and
Eric A. Stach
Pariasadat Musavigharavi*
Affiliation:
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, United States Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, United States
Rossiny Beaucejour
Affiliation:
Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA, United States
Roy H. Olsson III
Affiliation:
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, United States
Eric A. Stach
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, United States Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, PA, United States
*
*Corresponding author: pgharavi@seas.upenn.edu

Abstract

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Type
Developments of 4D-STEM Imaging - Enabling New Materials Applications
Information
Microscopy and Microanalysis , Volume 28 , Supplement S1 , August 2022 , pp. 444 - 445
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Copyright
Copyright © Microscopy Society of America 2022

References

Ophus, C. Microscopy and Microanalysis 25 (2019), p. 563. https://doi.org/10.1017/S1431927619000497.CrossRefGoogle Scholar
The authors acknowledge funding from the NSF CAREER Award (1944248) and in part The Defense Advanced Research Projects Agency (DARPA) Small Business Innovation Research (SBIR) under award HR0011-21-9-0004. This work was carried out in part at the Singh Center for Nanotechnology at the University of Pennsylvania, a member of the National Nanotechnology Coordinated Infrastructure (NNCI) network, which is supported by the National Science Foundation (Grant No. HR0011-21-9-0004).Google Scholar