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Fluctuation Cepstral STEM for Imaging Disordered Materials

Published online by Cambridge University Press:  22 July 2022

Saran Pidaparthy
Affiliation:
Department of Materials Science and Engineering Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois, United States
Haoyang Ni
Affiliation:
Department of Materials Science and Engineering Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States
Hanyu Hou
Affiliation:
Department of Materials Science and Engineering Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States
Daniel P. Abraham
Affiliation:
Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois, United States
Jian-Min Zuo*
Affiliation:
Department of Materials Science and Engineering Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States
*
*Corresponding author: jianzuo@illinois.edu

Abstract

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Type
Developments of 4D-STEM Imaging - Enabling New Materials Applications
Copyright
Copyright © Microscopy Society of America 2022

References

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SP acknowledges support from the U. S. Department of Energy Graduate Student Research (SCGSR) program. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the U. S. Department of Energy under contract number DE-SC0014664. DA acknowledges support from DOE's Vehicle Technologies Office. This document has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357.Google Scholar