Spontaneous polarization reversal and domain structures of flux-grown ferroelectric KTiOPO4 and isomorphic crystals were studied. Two temperature regions with dominant either ionic or electronic conductivity were found. It was shown that in the high-temperature region mobile cations contributed sufficiently to internal screening process. The ionic leakage current was suppressed at a specific temperature point for each studied crystal. High crystallographic asymmetry of domain wall velocity was observed. This shows that the electrode pattern should be properly oriented relative to the crystal axes of KTiOPO4 and its isomorphs for fabrication of periodically poled domain configurations used in nonlinear optical conversions.

The mechanical deformation of crystalline silicon induced by micro-indentation has been studied. Indentations were made using a variety of loading conditions. The effects on the final deformation microstructure of the load–unload rates and both spherical and pointed (Berkovich) indenters were investigated at maximum loads of up to 250 mN. The mechanically deformed regions were then examined using cross-sectional transmission electron microscopy (XTEM), Raman spectroscopy, and atomic force microscopy. High-pressure phases (Si-XII and Si-III) and amorphous silicon have been identified in the deformation microstructure of both pointed and spherical indentations. Amorphous Si was observed using XTEM in indentations made by the partial load–unload method, which involves a fast pressure release on final unloading. Loading to the same maximum load using the continuous load cycle, with an approximately four times slower final unloading rate, produced a mixture of Si-XII and Si-III. Slip was observed for all loading conditions, regardless of whether the maximum load exceeded that required to induce “pop-in” and occurs on the {111} planes. Phase transformed material was found in the region directly under the indenter which corresponds to the region of greatest hydrostatic pressure for spherical indentation. Slip is thought to be nucleated from the region of high shear stress under the indenter.

Solid-state foaming of commercial purity titanium was achieved by hot-isostatic pressing of titanium powders in the presence of argon, followed by expansion of the resulting high-pressure argon bubbles at ambient pressure and elevated temperature. The foaming step was performed under isothermal conditions or during thermal cycling around the α/β allotropic temperature of titanium. Such thermal cycling is known to induce transformation superplasticity (TSP) in bulk titanium due to the complex superposition of internal transformation stresses and an external biasing stress; TSP was found to be active during foaming, where the deviatoric biasing stress was provided by the internal pore pressure. As compared to isothermal control experiments where foam expansion occurred by creep only, TSP foaming under thermal cycling conditions led to significantly higher terminal porosity (41% as compared to 27%). The foaming rates were also higher for the TSP case before pore growth ceased. Additionally, foaming experiments were conducted under an externally applied uniaxial tensile stress of 1 MPa. This procedure resulted in foaming kinetics and porosities similar to those achieved without an external stress and, for the TSP case, led to high aspect ratio pores elongated in the direction of the applied external stress.

Undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl2S4 and BaAl2Se4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl2S4 and at 486 and 652 nm in the BaAl2Se4. These emissions are assigned to donor–acceptor pair recombinations. Sharp emission peaks were observed in the Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm3+, these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm3+ substituting with the Ba site.