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Thick Pb(Zr,Ti)O3 films fabricated by inducing residual compressive stress during the annealing process

Published online by Cambridge University Press:  03 March 2011

Jae-Wung Lee ,
Jong-Jin Choi ,
Gun-Tae Park ,
Chee-Sung Park  and
Hyoun-Ee Kim
Jae-Wung Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jong-Jin Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
*
a)Address all correspondence to this author. e-mail: kimhe@snu.ac.kr
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Abstract

The effects of residual stress induced during the annealing process on the microstructural evolution and electrical properties of Pb(Zr,Ti)O3 (PZT) films were investigated. PZT films were deposited on platinized silicon substrates by the radio frequency magnetron sputtering method using a single oxide target. Compressive stress was induced in the film by bending the silicon substrate during sputtering using a specially designed substrate holder and subsequently annealing the film without the holder. Without the residual stress, the PZT film was severely cracked when it was thicker than 2 μm due to the thermal expansion mismatch between the PZT and the Si substrate. On the other hand, when the residual stress was applied, no cracks were detected in the film for thicknesses of up to 4 μm. The suppression of crack formation was attributed to the residual compressive stress that compensated for the tensile stress generated during and/or after the annealing process. The electrical properties of the PZT film with the residual stress were improved compared to those of the PZT film without the residual stress.

Keywords

FerroelectricPiezoelectricThin film
Type
Rapid Communications
Information
Journal of Materials Research , Volume 20 , Issue 11 , November 2005 , pp. 2898 - 2901
Copyright
Copyright © Materials Research Society 2005

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References

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