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Texture and transport in spray pyrolyzed TlBa2Ca2Cu3O9 thick films

Published online by Cambridge University Press:  03 March 2011

J.E. Tkaczyk
Affiliation:
General Electric Research and Development, Schenectady, New York 12301
J.A. Sutliff
Affiliation:
General Electric Research and Development, Schenectady, New York 12301
J.A. DeLuca
Affiliation:
General Electric Research and Development, Schenectady, New York 12301
P.J. Bednarczyk
Affiliation:
General Electric Research and Development, Schenectady, New York 12301
C.L. Briant
Affiliation:
General Electric Research and Development, Schenectady, New York 12301
Z.L. Wang
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
A. Goyal
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
D.M. Kroeger
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
D.H. Lowndes
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
E.D. Specht
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

The electron backscattering pattern technique has been applied to the microstructural investigation of Tl(1223) thick films formed by vapor-phase thallination of Ag-containing Ba–Ca–Cu–oxide precursors. For samples grown on polycrystalline YSZ, considerable biaxial alignment is found in localized, multigrain regions as wide a 100 μm or more. However, on scales above 1 mm the overall texture remains only uniaxial with the c-axes (i.e., [001]) aligned perpendicular to the plane of the substrate. On single-crystal KTaO3 an epitaxial relationship is evident which persists to the surface of a 3 μm thick film. Modest variations in the processing protocol yield films containing grains oriented with the c-axis in the plane, resulting in the degradation of transport properties. The data suggest a growth mode in which sparse nucleation occurs at the substrate followed by rapid lateral crystallization.

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Articles
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Dimos, D., Chaudhari, P., Mannhart, J., and LeGoues, F. K., Phys. Rev. Lett. 61, 219 (1988); Kawasaki, M., Sarnelli, E., Chaudhari, P., Gupta, A., Kussmaul, A., Laceey, J., and Lee, W., Appl. Phys. Lett. 62, 417 (1993); Cardona, A.H., Suzuki, H., Yamashita, T., Young, K.H., and Bourne, L.C., Appl. Phys. Lett. 62, 411 (1993).CrossRefGoogle Scholar
2Nabatame, T., Koike, S., Hyun, O.B., Hirabayashi, I., Suhara, H., and Nakamura, K., Appl. Phys. Lett. 65, 776 (1994).CrossRefGoogle Scholar
3Babcock, S.E., Cai, X.Y., Kaiser, D.L., and Larbalestier, D.C., Nature 347, 167 (1990); Eom, C.B., Marshall, A.F., Suzuki, Y., Boyer, B., Pease, R.F.W., and Geballe, T.H., Nature 353, 544 (1991).CrossRefGoogle Scholar
4Haldar, P., Hoen, J. G., Motowidlo, I. R., Balachandra, U., Iwasa, Y., and Yunus, M., in Advances in Superconductivity VI (Springer-Verlag, 1994), Vol. 2, p. 605.CrossRefGoogle Scholar
5Bulaevskii, L. N., Daemen, L. L., Maley, M. P., and Coulter, J. Y., Phys. Rev. B 48, 13798 (1993).CrossRefGoogle Scholar
6Iijima, Y., Tanabe, N., Kohno, O., and Ikeno, Y., Appl. Phys. Lett. 60, 769 (1992); Reade, R.P., Berdahl, P., Russo, R.E., Garrison, S.M., Appl. Phys. Lett. 61, 2231 (1992).CrossRefGoogle Scholar
7DeLuca, J. A., Karas, P. L., Tkaczyk, J. E., Bednarczyk, P. J., Garbauskas, M. F., Briant, C.L., and Sorensen, D.B., Physica C 205, 21 (1993).CrossRefGoogle Scholar
8Tkaczyk, J. E., DeLuca, J. A., Karas, P. L., Bednarczyk, P. J., Garbauskas, M. F., Arendt, R. H., and Lay, K. W., Appl. Phys. Lett. 61, 610 (1992).CrossRefGoogle Scholar
9Miller, D.J., Hu, J.G., Hettinger, J.D., Gray, K.E., Tkaczyk, J.E., DeLuca, J., Karas, P. L., Sutliff, J. A., and Garbauskas, M. F., Appl. Phys. Lett. 63, 556 (1993).CrossRefGoogle Scholar
10Kroeger, D.M., Goyl, A., Specht, E.D., Wang, Z.L., Tkaczyk, J.E., Sutliff, J. A., and DeLuca, J.A., Appl. Phys. Lett. 64, 106 (1994).CrossRefGoogle Scholar
11Specht, E.D., Goyal, A., Kroeger, D.M., DeLuca, J.A., Tkaczyk, J.E., Briant, C. L., and Sutliff, J. A., Physica C 226, 76 (1994).CrossRefGoogle Scholar
12Holstein, W.L., J. Phys. Chem. 97, 4224 (1993).CrossRefGoogle Scholar
13Dingley, D.J. and Randle, V., Microtexture Determination by Electron Back-scatter Diffraction (Chapman and Hall, 1992); J. A. Venables and C.J. Harland, Philos. Mag. 27, 1193 (1973).CrossRefGoogle Scholar
14Channel ver. 2.5 by N.H. Schmidt, DDS, Inc., Bosbrovej 21, DK-8900 Anders, Denmark.Google Scholar
15Briant, C.L., DeLuca, J.A., Karas, P.L., Garbauskas, M.F., Sutliff, J.A., Goyal, A., and Kroeger, D., J. Mater. Res. 10, 823 (1995).CrossRefGoogle Scholar
16Kroeger, D. M., Goyal, A., Specht, E. D., Wang, Z. L., Tkaczyk, J. E., Sutliff, J.A., and DeLuca, J.A., in Processing of Long Lengths of Superconductors, edited by Balachandra, U., Collins, E.W., and Goyal, A. (TMS Symp., Pittsburgh, PA, 1993).Google Scholar
17Gingley, D. S., Kwak, J.F., Venturini, E.L., Morosin, B., and Baughman, R.J., Physica C 160, 42 (1989).CrossRefGoogle Scholar
18Koo, H-S., Tu, G.C., and Tseng, T-Y., J. Am. Ceram. Soc. 77, 27 (1994).CrossRefGoogle Scholar
19Tang, Y. Q., Sheng, Z. Z., Luo, W. A., Chan, I. N., Chen, Z. Y., Li, Y. F., and Pederson, D.O., Physica C 214, 190 (1993).CrossRefGoogle Scholar
20Morgan, P.E.D., Piche, J.D., and Housely, R.M., Physica C 191, 179 (1992); Deslandes, F., Raveau, B., Dubots, P., and Legat, D., Solid State Commun. 71, 407 (1989).CrossRefGoogle Scholar
21Patel, S. M. and Patel, N. G., Thin Solid Films 122, 297 (1984); E. I. Givargizov, Oriented Crystallization on Amorphous Substrates (Plenum Press, New York, 1991), Chap. 4, Sect. 2.CrossRefGoogle Scholar
22Lanham, M., James, T. W., Eddy, M., Lange, F. F., and Clarke, D. R., Appl. Phys. Lett. 62, 3028 (1993).CrossRefGoogle Scholar
23Luo, J. S., Merchant, N., Maroni, V.A., Riley, G.N. Jr., and Carter, W.L., Appl. Phys. Lett. 63, 690 (1993); Feng, Yi., High, Y.E., Larbalestier, D. C., Sung, Y.S., and Hellstrom, E. E., Appl. Phys. Lett. 62, 1553 (1993).CrossRefGoogle Scholar
24Polonka, J., Wu, Ming, Li, Qiang, Goldman, A.I., and Finnemore, D.K., Appl. Phys. Lett. 59, 3640 (1991).CrossRefGoogle Scholar
25Givargizov, E. I., Oriented Crystallization on Amorphous Substrates (Plenum Press, New York, 1991), Chap. 1.CrossRefGoogle Scholar