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Synthesis of Silicon Carbide Films from Partially Oxidized Polyvinylsilane by Carbon Tetrachloride Solution Casting

Published online by Cambridge University Press:  31 January 2011

Masaki Narisawa ,
Takeshi Hasegawa ,
Kiyohito Okamura ,
Masayoshi Itoh ,
Thomas Apple ,
Kevin V. Moraes  and
Leonard V. Interrante
Masaki Narisawa*
Affiliation:
Department of Metallurgy and Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Takeshi Hasegawa
Affiliation:
Department of Metallurgy and Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Kiyohito Okamura
Affiliation:
Department of Metallurgy and Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Masayoshi Itoh
Affiliation:
Fukushima National College of Technology, 30 Aza Nagao, Taira Kamiarakawa, Iwaki, Fukushima 970–8034, Japan
Thomas Apple
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
Kevin V. Moraes
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
Leonard V. Interrante
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
*
a)Address all correspondence to this author. e-mail: nar@mtl.osakafu-u.ac.jp
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Abstract

Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si–CH2–Si) structures are formed in the films at 473–673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC1.38O0.21 and SiC1.41O0.51, depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673–1873 K. The compositions of the films were changed to approximately SiC1.25 and SiC1.26, respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273–1673 K while a protective silica layer was formed on their surfaces.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 214 - 223
Copyright
Copyright © Materials Research Society 2002

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