Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-05T11:01:03.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface migration and volume diffusion in the AgGaSe2−Ag2Se system

Published online by Cambridge University Press:  31 January 2011

N-H. Kim ,
R.S. Feigelson  and
R.K. Route
N-H. Kim
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
R.S. Feigelson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
R.K. Route
Affiliation:
Center for Materials Research, Stanford University, Stanford, California 94305
Get access

Abstract

AgGaSe2 crystals are useful for nonlinear optical applications after a post-growth heat-treatment in the presence of Ag2Se to eliminate an unavoidable precipitate phase that degrades their optical properties. To understand better the heat-treatment procedure, surface migration and volume diffusion were investigated in the Ag2Se–AgGaSe2 system using reactive diffusion couples which were analyzed by x-ray diffraction, optical microscopy, and electron probe microanalysis. Surface diffusivities of all mobile species were found to be much larger than volume diffusivities. Specific values determined were DsAg = 5.43 × 10−4 exp(-0.46 eV/kT) and DvAg = 2.40 × 10−7 exp(-0.84 eV/kT), where DsAg and DvAg are effective surface diffusivity and effective volume diffusivity of Ag, respectively. The corresponding diffusivities for Ga and Se were found to be almost the same, indicating that Ga and Se move together with Ag to maintain binary (Ag2Se and Ga2Se3) stoichiometry and electroneutrality. These findings are consistent with the pattern of annihilation of the second phase precipitates in the AgGaSe2 matrix during heat treatment.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1215 - 1220
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Shay, J. L. and Wernick, J. H., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications (Pergamon Press, New York, 1975), Chap. 1.Google Scholar
2.Romand, M., Roubin, M., and Deloume, J-P., J. Solid State Chem. 25, 59–64 (1978).CrossRefGoogle Scholar
3.Route, R. K., Feigelson, R. S., and Raymakers, R. J., J. Cryst. Growth 24–25, 390–395 (1974).CrossRefGoogle Scholar
4.Mikkelsen, J. C. Jr, Mater. Res. Bull. XII, 497–502 (1977).CrossRefGoogle Scholar
5.Route, R. K., Feigelson, R. S., Raymakers, R. J., and Choy, M. M., J. Cryst. Growth 33, 239–245 (1976).CrossRefGoogle Scholar
6.Iseler, G. W., J. Cryst. Growth 41, 146–150 (1977).CrossRefGoogle Scholar
7.Singh, N. B., Hopkins, R. H., and Feichtner, J. D., J. Mater. Sci. 21, 837–842 (1986).CrossRefGoogle Scholar
8.Singh, N. B., Hopkins, R. H., Mazelsky, R., and Dorman, H. H., Mater. Lett. 4 (8–9), 357–359 (1986).CrossRefGoogle Scholar
9.Feigelson, R. S. and Route, R. K., Mater. Res. Bull. XXV, 1503–1511 (1990).CrossRefGoogle Scholar
10.Pines, B. Y., Sov. Phys. Solid State 1, 434–437 (1959).Google Scholar
11.Pines, B. Y. and Chaikovskii, E. F., Sov. Phys. Solid State 1, 864–869 (1959).Google Scholar
12.Mrowec, S., Defects and Diffusion in Solids (Elsevier, Amsterdam, 1980), Chap. 2.Google Scholar
13.JCPDS, Powder Diffraction File, Alphabetical Index, Inorganic Phases (International Centre for Diffraction Data, 1987).Google Scholar
14.Porter, D. A. and Easterling, K. E., Phase Transformations in Metals and Alloys (Van Nostrand Reinhold Co., Oxford, 1981), Chap. 2.Google Scholar
15.Neumann, G. and Neumann, G. M., “Surface Self-Diffusion of Metals,” edited by Wohlbier, F. H. (Diffusion Monograph Series 1, Diffusion Information Center, Bay Village, OH).Google Scholar
16.Kendall, D. L., Semiconductors and Semimetals (Academic Press, New York, 1968), Vol. 4, Chap. 3.Google Scholar
17.Shaw, D., J. Cryst. Growth 86, 778–796 (1988).CrossRefGoogle Scholar
18.Tang, M. S., Ph.D. Thesis, Stanford University (1987).Google Scholar
19.Kato, H., Yokozawa, M., and Takayanagi, S., Jpn. J. Appl. Phys. 4, 1019 (1965).CrossRefGoogle Scholar
20.Woodbury, H. H. and Hall, R. B., Phys. Rev. 157, 641 (1967).CrossRefGoogle Scholar
21.Tang, M. S. and Stevenson, D. A., J. Phys. Chem. Solids 51 (6), 563–569 (1990).CrossRefGoogle Scholar
22.Feigelson, R. S. and Route, R. K., Opt. Eng. 26 (20), 113 (1987).CrossRefGoogle Scholar
23.Tuck, B., Introduction to Diffusion in Semiconductors (Peter Peregrinus, Ltd., England, 1970), Chap. 9. 1220Google Scholar