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Study of enhanced phosphorus activity in n-type Si80Ge20 as a function of the doping process

Published online by Cambridge University Press:  31 January 2011

S. H. Han  and
B. A. Cook
S. H. Han
Affiliation:
Ames Laboratory, Iowa State University, Ames, Iowa 50011–3020
B. A. Cook
Affiliation:
Ames Laboratory, Iowa State University, Ames, Iowa 50011–3020
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Abstract

The electrical activity of phosphorus in Si80Ge20 alloys prepared by two nonconventional doping processes has been investigated over the temperature range 25–1250 °C. Both a solid state (mechanical alloying) and gaseous phase doping processes were found to extend the electrical activity of phosphorus in Si80Ge20 alloys beyond the reported maximum equilibrium value (2.1 × 1020/cm3) to 2.5–2.9 × 1020/cm3 within the temperature range 900 1200 °C. It is likely that this extended electrical activity of phosphorous is associated with a high density of defects. The enhanced electrical activity of phosphorus enabled Si80Ge20 alloys to have 300 to 1000 °C integrated average electrical power factors in the range 30.1–35.7 μW/cm-°C2.

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Articles
Information
Journal of Materials Research , Volume 11 , Issue 1 , January 1996 , pp. 55 - 62
Copyright
Copyright © Materials Research Society 1996

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