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Studies on the plastic deformation of Tl3AsSe3 single crystals by hardness indentation

Published online by Cambridge University Press:  31 January 2011

K. C. Yoo ,
J. A. Spitznagel  and
R. H. Hopkins
K. C. Yoo
Affiliation:
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
J. A. Spitznagel
Affiliation:
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
R. H. Hopkins
Affiliation:
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
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Abstract

The deformation behavior of Tl3AsSe3 (TAS) single crystals has been studied by hardness tests in four different crystal surfaces, the (10$\overline 1$0), (1$\overline 2$10), (0001), and the plane where the normal is tilted 19° off the hexagonal c axis in the b–c plane. The dominant slip planes are of the (10$\overline 1$1) type; the possibility of (10$\overline 1$0) and (0001) slip was also observed. The observed dependence of force on the length of diamond pyramid indentations implies that TAS behaves to some degree like a ductile metal. Measurements of hardness anisotropy are very useful for defining crystal growth and handling conditions that minimize the effect of stresses. X-ray topographs of Knoop hardness indentations indicate that the measured x-ray diffraction contrast is closely related to the rotational component of each individual slip system activated by the hardness indentation.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1404 - 1413
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Feichter, J. D. and Roland, G. W., Appl. Opt. 11(5), 993 (1972).Google Scholar
2Henningsen, T., Garbuny, M., Kun, Z., and Singh, N. B. (unpublished results).Google Scholar
3Pastel, R. L., Appl. Opt. 26, 1574 (1987).CrossRefGoogle Scholar
4Gottlieb, M. and Kun, Z., Appl. Opt. 22(14), 2104 (1983).Google Scholar
5Yoo, K. C., Henningsen, T., Grimmett-Dawson, K. D., Singh, N. B., and Hopkins, R. H., J. Appl. Phys. 64(2), 827 (1988).CrossRefGoogle Scholar
6Gould, T. A. and Lien, S. Y. (unpublished results).Google Scholar
7Singh, N. B., Gould, T. A., and Hopkins, R. H., J. Cryst. Growth 78, 43 (1986).CrossRefGoogle Scholar
8Hockey, B. J., in The Science of Hardness Testing and Its Research Applications, edited by Westbrook, J. H. and Conrad, H. (ASM, Metals Park, OH, 1973), p. 21.Google Scholar
9Hong, H. Y.-P. and Mikkelsen, C. Jr , Mater. Res. Bull. 9, 365 (1974).Google Scholar
10Daniels, F. W. and Dunn, C. G., trans. ASM 41, 419 (1949).Google Scholar
11Frank, F. C. and Lawn, B. R., Proc. R. Soc. London A 299, 291 (1967).Google Scholar
12Lasnkford, J., J. Mater. Sci. Lett. 1, 493 (1982).Google Scholar
13Yoo, K. C., Rosemeier, R. G., Elban, W. L., and Armstrong, R. W., J. Mater. Sci. Lett. 3, 560 (1984).CrossRefGoogle Scholar
14Armstrong, R. W. and Raghuram, A. C., in Ref. 8, p. 174.Google Scholar
15Yoo, K. C., Roessler, B., Armstrong, R. W., and Kuriyama, M., Scr. Metall. 15, 1245 (1981).Google Scholar
16Yoo, K. C. and Hopkins, R. B. (unpublished results).Google Scholar