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Structure and microwave dielectric properties of (Zn1−xNix)TiO3 ceramics

Published online by Cambridge University Press:  31 January 2011

Hyo Tae Kim*
Affiliation:
New Functional Materials Research Department, Korea Institute of Ceramic Engineering & Technology, 153-801 Seoul, Korea
Joon-Cheol Hwang
Affiliation:
New Functional Materials Research Department, Korea Institute of Ceramic Engineering & Technology, 153-801 Seoul, Korea
Joong-Hee Nam
Affiliation:
New Functional Materials Research Department, Korea Institute of Ceramic Engineering & Technology, 153-801 Seoul, Korea
Byung Hyun Choi
Affiliation:
New Functional Materials Research Department, Korea Institute of Ceramic Engineering & Technology, 153-801 Seoul, Korea
Michael T. Lanagan
Affiliation:
Center for Dielectric Studies, Materials Research Institute, University Park, The Pennsylvania State University, Pennsylvania 16802
*
a)Address all correspondence to this author. e-mail: hytek@kicet.re.kr
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Abstract

Dielectric ceramics in the system (Zn1−xNix)TiO3, x = 0 to 1 were synthesized by the solid-state reaction route. The phase distribution, microstructure, and dielectric properties were characterized using powder x-ray diffraction analysis, electron microscopy, and microwave measurement techniques. Three phase composition regions were identified in the specimens sintered at 1150 °C: [spinel + rutile] at 0 ≤ x ≤ 0.5, [spinel + ilmenite + rutile] at 0.5 < x ≤ 0.8, and [ilmenite] phase at 0.8 < x ≤ 1. For the 0 ≤ x ≤ 0.5 region, the amount of Ti-rich precipitates incorporated into the spinel phase decreased with the Ni content at 0 ≤ x ≤ 0.5, with a concomitant increase of the rutile phase. The microwave dielectric properties depended on the phase composition and volume according to the three typical phase regions, where the relative amount of rutile to the spinel or ilmenite determined the dielectric properties. The dielectric constant as a function of Ni addition was modeled with a Maxwell mixing rule. An optimum phase distribution was determined in this system with dielectric constant of 22, a Q × f of 60,000, and a low temperature coefficient of the resonant frequency.

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Articles
Copyright
Copyright © Materials Research Society 2003

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