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Single-phase aluminum nitride films by dc-magnetron sputtering

Published online by Cambridge University Press:  31 January 2011

J. S. Morgan ,
W. A. Bryden ,
T. J. Kistenmacher ,
S. A. Ecelberger  and
T. O. Poehler
J. S. Morgan
Affiliation:
Milton S. Eisenhower Research Center, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland 20723
W. A. Bryden
Affiliation:
Milton S. Eisenhower Research Center, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland 20723
T. J. Kistenmacher
Affiliation:
Milton S. Eisenhower Research Center, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland 20723
S. A. Ecelberger
Affiliation:
Milton S. Eisenhower Research Center, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland 20723
T. O. Poehler
Affiliation:
Milton S. Eisenhower Research Center, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland 20723
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Abstract

Single-phase aluminum nitride films were deposited onto fused quartz and single-crystal sapphire by current-controlled, reactive, de magnetron sputtering from an aluminum metal target. Optical and structural properties were observed to correlate systematically with the composition of the sputter gas over a wide range of nitrogen partial pressures. A transition in the electrical conductivity of the deposited films occurred as a function of N2 partial pressure. This transition is driven by the condition of the target surface. When the N2 partial pressure was high and the target surface was substantially covered with AlNx, the deposited film was insulating, stoichiometric AlN. When the N2 partial pressure was low and the target surface was substantially Al°, the deposited film was conducting, substoichiometric AlNx.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2677 - 2681
Copyright
Copyright © Materials Research Society 1990

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References

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