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Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation

Published online by Cambridge University Press:  31 January 2011

R. Ramesham  and
T. Roppel
R. Ramesham
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849-5201
T. Roppel
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849-5201
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Abstract

Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Processes were developed to selectively damage the substrates by ultrasonic agitation in methanol containing diamond particles of typical size 90 μm. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1144 - 1151
Copyright
Copyright © Materials Research Society 1992

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