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Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride

Published online by Cambridge University Press:  31 January 2011

Stephen J. Harris ,
Anita M. Weiner ,
Gary L. Doll  and
Wen-Jin Meng
Stephen J. Harris
Affiliation:
Physics and Physical Chemistry Department, General Motors R–D Center, Warren, Michigan 48090-9055
Anita M. Weiner
Affiliation:
Physics and Physical Chemistry Department, General Motors R–D Center, Warren, Michigan 48090-9055
Gary L. Doll
Affiliation:
Physics and Physical Chemistry Department, General Motors R–D Center, Warren, Michigan 48090-9055
Wen-Jin Meng
Affiliation:
Physics and Physical Chemistry Department, General Motors R–D Center, Warren, Michigan 48090-9055
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Abstract

A BN film containing comparable amounts of sp2 and sp3 phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1% CH4 in H2. After a partial etch, examination by FTIR shows that the sp2 was preferentially etched, leaving a larger sp3 fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 2 , February 1997 , pp. 412 - 415
Copyright
Copyright © Materials Research Society 1997

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References

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