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Room-temperature hydrogen-induced resistivity response of Pd/Mg–Ni films

Published online by Cambridge University Press:  31 January 2011

Yu Ming Tang  and
Chung Wo Ong
Chung Wo Ong*
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
*
a) Address all correspondence to this author. e-mail: apacwong@inet.polyu.edu.hk
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Abstract

The structure and the response of the effective electrical resistivity 〈ρ〉 in hydrogenation–dehydrogenation processes of palladium-coated/magnesium-nickel (Pd/Mg–Ni) films were investigated as functions of Mg-to-Ni ratio, substrate temperature, and thickness of Pd overcoat. Films of noncrystalline structures with various Mg-to-Ni ratios showed prominent hydrogen-(H-)induced switching effect of 〈ρ〉. A film is supposed to contain segregated noncrystalline regions of different Mg-to-Ni ratios. The regions of an Mg-to-Ni ratio close to 2 are responsible for the switching processes. At room temperature, a dehydrogenation process is much slower than a hydrogenation process. Crystallization hindered the H-induced switching effect of 〈ρ〉. The use of a thicker Pd overcoat accelerated the change of 〈ρ〉 in the initial hydrogenating process but diminished the contrast. Results led to some discussions on the mechanisms governing the switching effects.

Keywords

HydrogenationX-ray diffraction (XRD)X-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 6 , June 2009 , pp. 1928 - 1935
Copyright
Copyright © Materials Research Society 2009

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