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Reactive ion etching damage to the electrical properties of ferroelectric thin films

Published online by Cambridge University Press:  31 January 2011

W. Pan ,
C. L. Thio  and
S. B. Desu
W. Pan
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
C. L. Thio
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
S. B. Desu
Affiliation:
Materials Science and Engineering Department, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
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Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 2 , February 1998 , pp. 362 - 367
Copyright
Copyright © Materials Research Society 1998

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References

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