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Quantum size effect of ZnSe microcrystal-doped SiO2 glass thin films prepared by RF-sputtering method

Published online by Cambridge University Press:  31 January 2011

Masayuki Hayashi ,
Takafumi Iwano ,
Hiroyuki Nasu ,
Kanichi Kamiya ,
Naoki Sugimoto  and
Kazuyuki Hirao
Masayuki Hayashi
Affiliation:
Hirao Active Glass Project, ERATO, JST, Keihanna-Plaza, 1–7 Hikaridai, Seika-cho, Kyoto 619–02, Japan
Takafumi Iwano
Affiliation:
Department of Chemistry for Materials, Faculty of Engineering, Mie University, Kamihama-cho 1515, Tsu, Mie 514, Japan
Hiroyuki Nasu
Affiliation:
Department of Chemistry for Materials, Faculty of Engineering, Mie University, Kamihama-cho 1515, Tsu, Mie 514, Japan
Kanichi Kamiya
Affiliation:
Department of Chemistry for Materials, Faculty of Engineering, Mie University, Kamihama-cho 1515, Tsu, Mie 514, Japan
Naoki Sugimoto
Affiliation:
Hirao Active Glass Project, ERATO, JST, Keihanna-Plaza, 1–7 Hikaridai, Seika-cho, Kyoto 619–02, Japan
Kazuyuki Hirao
Affiliation:
Hirao Active Glass Project, ERATO, JST, Keihanna-Plaza, 1–7 Hikaridai, Seika-cho, Kyoto 619–02, Japan and Division of Material Chemistry, Faculty of Engineering, Kyoto University, Yoshida, Sakyo-ku Kyoto 606–01, Japan
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Abstract

Semiconductor ZnSe microcrystal-doped SiO2 glass thin films were prepared by the RF-magnetron sputtering method. The particle size of ZnSe microcrystals in the films depended on sputtering conditions such as input power, substrate temperature, and relative surface area ratio (ZnSe/SiO2) in the target. The blue shift of the optical absorption edge was observed in these glass films. This blue shift energy was explained in terms of the independent confinement of electrons and positive holes, Coulomb force and the influence of a collapsed exciton and the dielectric constant of the matrix glass being taken into consideration.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2552 - 2558
Copyright
Copyright © Materials Research Society 1997

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