Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-24T16:49:45.078Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of highly oriented polycrystalline AlN thin films deposited on glass at oblique-angle incidence

Published online by Cambridge University Press:  31 January 2011

A. Rodríguez-Navarro ,
W. Otañno-Rivera ,
J. M. García-Ruiz ,
R. Messier  and
L. J. Pilione
A. Rodríguez-Navarro
Affiliation:
Instituto Andaluz de Ciencias de la Tierra-CSIC, Campus de Fuentenueva, 18002 Granada, Spain
W. Otañno-Rivera
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
J. M. García-Ruiz
Affiliation:
Instituto Andaluz de Ciencias de la Tierra-CSIC, Campus de Fuentenueva, 18002 Granada, Spain
R. Messier
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
L. J. Pilione
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
Get access

Abstract

A new method to prepare polycrystalline AlN thin films biaxially oriented on amorphous substrates has been demonstrated. The films were deposited at different angles of incidence with a rf sputtering system. Population-1 crystallites, oriented with their c-axis pointing toward the incoming flux with random orientation in aximuthal directions, predominate at low angle of incidence (near normal). Population-2 crystallites result from non-normal incidence and have their c-axis tilted away from the incoming flux and predominate at high, near glancing, angle of incidence. The alignment of crystallites (population-2) increases with angle of incidence. Crystallites align along the [11*0] channeling direction, characterized by a low sputtering yield, while misoriented crystal grains suffer a higher resputtering and their growth is inhibited. For films deposited at 75°, the FWHM of an x-ray ϕ scan profile is 25°, indicating a high in-plane alignment.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 7 , July 1997 , pp. 1689 - 1692
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Kuo, P. K., Auner, G. W., and Wu, Z. L., Thin Solid Films 253, 223 (1994).CrossRefGoogle Scholar
2.Okano, H., Takahashi, Y., Tanaka, T., Shibata, K., and Nakano, S., Jpn. J. Appl. Phys. 31, 3446 (1992).CrossRefGoogle Scholar
3.Yang, F., Namuri, E., Patel, S., and Shaw, D. T., Physica C 244, 304 (1995).CrossRefGoogle Scholar
4.Iijima, Y., Onabe, K., Futaki, N., Tanabe, N., Sadakata, N., Kohno, O., and Ikeno, Y., J. Appl. Phys. 74, 1905 (1993).CrossRefGoogle Scholar
5.Goyal, A., Specht, E. D., Kroeger, D. M., Tkacyzk, J. E., Briant, C. L., and DeLuca, J. A., Appl. Phys. Lett. 67, 2563 (1995).CrossRefGoogle Scholar
6.Yu, L. S., Harper, J.M. E., Cuomo, J. J., and Smith, D. A., J. Vac. Sci. Technol. A 4, 443 (1986).CrossRefGoogle Scholar
7.Sonnenberg, N., Longo, A. S., Cima, M. J., Chang, B. P., Ressler, K. G., McIntyre, P. C., and Liu, Y. P., J. Appl. Phys. 74, 1027 (1993).CrossRefGoogle Scholar
8. A detailed description of the sputtering conditions can be found in Rodríguez-Navarro, A., Otaño-Rivera, W., García-Ruiz, J. M., Messier, R. and Pilione, L. J., J. Mater. Res. 12, 1850–1855 (1997).CrossRefGoogle Scholar
9.Schulz, L. G., J. Appl. Phys. 20, 1030 (1949).CrossRefGoogle Scholar
10.Klein, C. and Hurlbut, C. S., Manual of Mineralogy (John Wiley & Sons Inc., New York, 1993), p. 105.Google Scholar
11.Winters, H. F. and Horne, D. E., Surf. Sci. 24, 587 (1971).CrossRefGoogle Scholar
12.Hu, H. K., Murray, P. T., Fukod, Y., and Rabalais, J. W., J. Chem. Phys. 74, 2247 (1981).CrossRefGoogle Scholar
13.Windischmann, H., Thin Solid Films 154, 159 (1987).CrossRefGoogle Scholar
14.Gesang, W. R., Oechsner, H., and Schoof, H., Nucl. Instrum. Methods 132, 687 (1976).CrossRefGoogle Scholar
15.Harper, J. M. E., Cuomo, J. J., and Hentzell, H. T. G., Appl. Phys. Lett. 43, 547 (1983).CrossRefGoogle Scholar
16.Smith, D. L., Thin Film Deposition (McGraw-Hill, New York, 1995), p. 443.Google Scholar
17.Wasa, K. and Hayakawa, S., Handbook of Sputter Deposition Technology (Noyes Publications, New Jersey, 1992), pp. 57–61.Google Scholar