Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-30T07:48:19.309Z Has data issue: false hasContentIssue false

Positive temperature coefficient resistance effect in Ba1-xSrxTiO3 ceramics modified with Bi2O3 and PbO by a vapor-doping method

Published online by Cambridge University Press:  31 January 2011

Jianquan Qi
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Zhilun Gui
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Longtu Li
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Yajing Wu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
Get access

Abstract

Ba1−xSrxTiO3-based positive temperature coefficient resistance (PTCR) ceramics were prepared by use of a vapor-doping method. When doped with Bi, the PTCR effect is improved; when doped with lead, however, the effect is weakened. The different influences of Bi and Pb doping on the ceramic properties are discussed in terms of the defect chemistry.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Haayman, P.W., Dam, R.W., and Klasens, H.A., German Patent No. 929 350 (23 June 1955).Google Scholar
2.Qi, J.Q., Chen, W.P., Zhang, Z.T., and Tang, Z.L., J. Mater. Sci. 32, 713 (1997).Google Scholar
3.Qi, J.Q., Chen, W.P., Wu, Y.J., and Li, L.T., J. Am. Ceram. Soc. 81, 437 (1998).CrossRefGoogle Scholar
4.Heywang, W., Solid-State Electron. 3, 51 (1961).CrossRefGoogle Scholar
5.Jonker, G.H., Solid-State Electron. 7, 895 (1964).CrossRefGoogle Scholar
6.Ihrig, H. and Puschert, W., J. Appl. Phys. 48, 3081 (1977).CrossRefGoogle Scholar
7.Daniels, J., Hardtl, K.H., Hennings, D., and Wernicke, R., Philips Res. Rep. 31, 487 (1976).Google Scholar
8.Kutty, T.R.N, Murugaraj, P., and Gajbhiye, N.S., Mat. Res. Bull. 20, 565 (1985).CrossRefGoogle Scholar
9.Miki, T., Fujimoto, A., and Jida, S., J. Appl. Phys. 83, 1592 (1998).CrossRefGoogle Scholar