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Photoluminescence studies of polycrystalline diamond films

Published online by Cambridge University Press:  31 January 2011

J. A. Freitas Jr. ,
J. E. Butler  and
U. Strom
J. A. Freitas Jr.
Affiliation:
Sachs/Freeman Associates, Landover, Maryland 20785-5396
J. E. Butler
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
U. Strom
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

The photoluminescence spectra of polycrystalline diamond films prepared by filament assisted chemical vapor deposition are dominated by a defect band with a strong zero phonon line near 1.68 eV and weak phonon replicas at lower energies. The 1.68 eV line is blucshifted from the 1.675 eV zero phonon line associated with the neutral vacancy in bulk diamond. The line shape and position of the 1.68 eV line are shown to depend on substrate material (Si, Mo, Ni). The 1.68 eV emission for Ni and Mo substrates is interpreted in terms of the stress shifted and broadened neutral vacancy emission. The broader 1.68 eV line observed for Si substrates may indicate the additional effects of Si absorption by the diamond films. Films prepared by an oxygen-acetylene flame technique exhibit two additional luminescence bands with zero phonon lines at 1.95 and 2.16 eV. These lines have been tentatively assigned to nitrogen-vacancy complexes. The temperature dependence (6 K–300 K) of the luminescence of a free-standing diamond film, which had been deposited on a molybdenum substrate, is comparable to similar observations reported for bulk diamond. We have also observed a strong dependence of the PL spectra radially across a given combustion film and associated this with details of the flame chemistry.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2502 - 2506
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Robins, L. H., Cook, L. P., Farabaugh, E. N., and Feldman, A., Phys. Rev. B 39, 13367 (1989).CrossRefGoogle Scholar
2Davies, G., Chemistry and Physics of Carbon, edited by Walker, P.L. Jr., and Thrower, P. A. (M. Dekker, New York, 1977), pp. 1–143.Google Scholar
3Clark, C. D., Mitchell, E.W. J., and Parsons, B. J., The Properties of Diamond, edited by Field, J. E. (Academic Press, New York, 1979), pp. 23–77.Google Scholar
4Walker, J., Rep. Prog. Phys. 42, 1605 (1979).CrossRefGoogle Scholar
5Davies, G., Rep. Prog. Phys. 44, 787 (1981).CrossRefGoogle Scholar
6Hansen, L.M., Carrington, W. A., Butler, J.E., and Snail, K.A., Mater. Lett. 7, 289 (1988).CrossRefGoogle Scholar
7Butler, J.E., Celli, F. G., Oakes, D.B., Hansen, L.M., Carrington, W. A., and Snail, K. A., High Temp. Mater. Chem. (in press).Google Scholar
8Davies, G., J. Phys. C: Solid State 12, 2551 (1979).CrossRefGoogle Scholar
9Vavilov, V.S., Gippius, A.A., Zaitsev, A.M., Deryagin, B.V., Spitsyn, B.V., and Alesenko, A. E., Sov. Phys. Semicond. 14, 1078 (1980).Google Scholar
10Zaitsev, A. M., Vavilov, V. S., and Gippius, A.A., Sov. Phys. Leb. Inst. 10, 15 (1981).Google Scholar
11Collins, A.T., Kamo, M., and Sato, Y., J. Phys. D: Appl. Phys. 22, 1402 (1989).CrossRefGoogle Scholar
12Collins, A.T., Kamo, M., and Sato, Y., in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).Google Scholar
13Collins, A.T. and Robertson, S.H., J. Mater. Sci. Lett. 4, 681 (1985).CrossRefGoogle Scholar
14Davies, G. and Hamer, M.F., Proc. R. Soc. London A 348, 285 (1976).Google Scholar
15Yokota, Y., Kawarada, H., and Hiraki, A., in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).Google Scholar
16Clark, C. D. and Norris, C. A., J. Phys. C: Solid State Phys. 4, 2223 (1971).CrossRefGoogle Scholar