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Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

G. Cicala ,
G. Bruno ,
P. Capezzuto  and
P. Favia
G. Cicala
Affiliation:
Centro di Studio per la Chimica dei Plasmi CNR, Dipartimento di Chimica Università di Bari, Via Orabona, 4-70126 Bari, Italy
G. Bruno
Affiliation:
Centro di Studio per la Chimica dei Plasmi CNR, Dipartimento di Chimica Università di Bari, Via Orabona, 4-70126 Bari, Italy
P. Capezzuto
Affiliation:
Centro di Studio per la Chimica dei Plasmi CNR, Dipartimento di Chimica Università di Bari, Via Orabona, 4-70126 Bari, Italy
P. Favia
Affiliation:
Centro di Studio per la Chimica dei Plasmi CNR, Dipartimento di Chimica Università di Bari, Via Orabona, 4-70126 Bari, Italy
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Abstract

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 12 , December 1996 , pp. 3017 - 3023
Copyright
Copyright © Materials Research Society 1996

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References

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